PCIM 2019 Nuremberg, Germany May 7-9, 2019 Hall 7, Booth 406   UnitedSiC adds 7 SiC FETs to 650V product portfolio May 7th, 2018, Princeton, New Jersey and Nuremberg, Germany: UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has added seven new TO220-3L and D2PAK-3L device/package combinations to its UJ3C (general purpose) and

        UnitedSiC to attend PCIM 2019 – where experts from research and industry come together, where trends and developments are presented to the public for the first time, and where the entire value chain is covered – all the way from components to intelligent systems. Visit us in Hall 7 at booth

March 19, 2019, Applied Power Electronics Conference (APEC) Anaheim CA, and Princeton, New Jersey: UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, today announced it has released a range of SiC JFET die suitable for co-packaging with a controller IC with built in low voltage MOSFET to fabricate an extremely fast, cascode-based, 20-100 W

        March 18, 2019, Princeton, New Jersey and Norwood, Massachusetts: UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, today announced a strategic investment and long-term supply agreement from Analog Devices, Inc. (ADI).  Terms of the investment and supply agreement were not announced. “From our first meeting with the ADI Power team,

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, will be focusing on new, innovative and efficient product offerings at this year’s Applied Power Electronics Conference (APEC) in California. The company will be announcing an expanded product range that addresses the large Flyback charging applications market, including consumer adapters and auxiliary power supplies. Visitors to

December 3, 2018, Princeton, New Jersey: UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs in a TO-247-4L 4-pin Kelvin Sense package option. Based on an efficient cascode configuration, this new series provides

November 5, 2018, Princeton, New Jersey: UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, announces the launch of its UF3C FAST series of 650 V and 1200 V high-performance silicon carbide FETs in a standard TO-247-3L package. The FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series. Based

              October 18, 2018, Princeton, New Jersey: UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, announces its Generation 3 1200 V and 650 V silicon carbide JFETs, expanding its existing unique portfolio of standalone normally-ON SiC JFETs. The devices are normally-ON with zero voltage gate drive, making them

        October 12, 2018, Princeton, New Jersey: UnitedSiC has been shortlisted as a finalist in the prestigious 2018 Elektra Awards, organized by the UK’s leading magazine for electronics professionals, Electronics Weekly. UnitedSiC is competing among a group of seven finalists for the Excellence in Product Design for Automotive category, including ON Semiconductor,

Speaking with PSDtv, Anup Bhalla, Ph.D., Vice President of Engineering, United Silicon Carbide, Inc. discusses the new 650 Volt and 1200 Volt series of devices from our 6 inch wafer fab.

Chris Dries, President and CEO of United Silicon Carbide, talks to Alix Paultre about their latest wide-bandgap devices at APEC 2018 in San Antonio, Texas. One of the areas the company is focusing on are in-car charging systems, a growing industry segment.

UJ3C1200 series offers a drop-in replacement without changes to gate drive voltage May 24, 2018, Princeton, New Jersey: Designers of Power Factor Correction stages (PFCs), Active Frontend Rectifiers, LLC converters and Phase Shift Full Bridge converters can now upgrade existing system performance by using the new UJ3C1200 series of SiC JFET cascodes from UnitedSiC. With

UnitedSiC is proud to have been awarded the Power & Energy Supplier of the Year for 2017 – Presented at APEC 2018 in San Antonio, Texas

Achieve 15-20% loss reduction and higher frequency operation using standard silicon MOSFET gate drive March 4, 2018, Princeton, New Jersey: UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has announced the UJ3C series of 650 V SiC FETs as drop-in replacements for silicon Superjunction MOSFETs. Available in standard TO-220, TO-247 and D2PAK-3L packages, they

Meet the leaders in Silicon Carbide at San Antonio, Booth 946 February 15, 2018, Princeton, New Jersey: UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, is pleased to announce it will be exhibiting at APEC 2018 (San Antonio, March 4-8), the industry’s premier event in applied power electronics. Visitors can meet the UnitedSiC team

Power Research Electronic and United Silicon Carbide Inc. to Start Strategic Cooperation Minervum, The Netherlands – October 16th, 2017 Power Research Electronic (PRE), a specialist power electronics solution provider for E-mobility, renewable and energy saving applications is signing a strategic agreement with United Silicon Carbide Inc. (UnitedSiC), a leading manufacturer of SiC diodes and FETs.

Monmouth Junction, New Jersey, August 29, 2017. United Silicon Carbide, Inc., a leading manufacturer of SiC Diodes and Transistors, announces the release of 650V and 1200V MPS SiC Diodes from its 6-inch platform.  Features include an optimized forward voltage drop, enhanced surge capability, and the industry’s lowest Qc (Qrr).  The diodes are ideally suited for telecom

The 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) is the premier biennial meeting covering all aspects of the latest SiC research and development. Scientists, engineers, and students in the SiC field will gain insights into how challenges and advances in one subfield motivate research in other subfields through a combination of

PCIM – Europe is a leading show case in Europe for power electronics and its applications in Intelligent Motion, Renewable Energy and Energy Management. At the exhibition UnitedSiC will be showcasing its recently released best in class SiC JBS Diodes, JFETs and Cascodes in addition to highlighting future developments of Silicon Carbide products used in power

APEC is the premier global event in applied power electronics. APEC 2017 continues to be a leader, engaging all sectors of the industry while maintaining one of the lowest registration costs of any IEEE conference. The conference will be held at the Tampa Convention Center, in beautiful Tampa, FL, March 26-30, 2017. We look forward

UnitedSiC and Richardson Electronics, Ltd. invite you to join us at an exclusive event to present the best way to streamline your power and energy design with Silicon Carbide technology. APEC is the premier global event in applied power electronics. APEC 2017 continues to be a leader, engaging all sectors of the industry while maintaining

Mouser Electronics, Inc. announces a global distribution agreement with United Silicon Carbide, Inc. (UnitedSiC), a manufacturer of high-efficiency silicon carbide (SiC) products. UnitedSiC technology and products enable affordable power efficiency in key markets, including wind and solar power, transportation, smart grid technology, and motor control.   The UnitedSiC product line available from Mouser Electronics includes

Global agreement supports expansion of UnitedSiC’s SiC products to new customers. Richardson Electronics has announced a new distribution agreement with United Silicon Carbide Inc (UnitedSiC), a manufacturer for SiC devices located in Monmouth Junction, New Jersey. This global agreement supports the expansion of UnitedSiC’s products to new customers. UnitedSiC is a semiconductor company specializing in

December 1st, 2016 Micropower Group to sign long term agreement with United Silicon Carbide Inc. for supplying SiC Cascode devices into their new 10kW battery chargers. Micropower uses UnitedSiC’s innovative SiC Cascodes for industrial battery chargers, enabling higher efficiency, smaller system size and cost reduction without having to change the gate drive requirements. Växjö, Sweden

United Silicon Carbide Inc. (UnitedSiC), based in Monmouth Junction, NJ, USA, is pleased to announce its attendance at the 2014 PCIM Europe Conference in Nuremberg, Germany, Booth #9-118. PCIM – Europe is a leading show case in Europe for power electronics and its applications in Intelligent Motion, Renewable Energy and Energy Management. At the exhibition

USCi will be showcasing our new array of newly commercially released diodes, JFETS and Cascode products ranging from 650Volts to 1.2KVolts. USCi will also be discussing next generation products from 3.3kv through 6.5kv products. USCi has been developing products for the Power Supply, UPS, power converters for Solar, Wind, EV Charging, Traction markets that focus

Eddie Cheng has joined UnitedSiC incorporated as the Director of Sales for China and Taiwan starting January 24, 2016. Since the start in 2009 of his career he has been focused on wide bandgap products in the PCs/Server Power, Telecom/Networks and Industrial Power market segments. Prior to joining UnitedSiC, Eddie was Cree’s Sales Director for

United Silicon Carbide Inc. (UnitedSiC) teamed with Sandia National Laboratories and the U.S. Dept. of Energy, Office of Electricity Delivery and Energy Reliability, Energy Storage Program to develop a 6.5kV rated Enhancement-Mode SiC JFET switch that demonstrates 20X lower switching losses than existing 6.5kV rated Si-IGBTs. The product was recognized in the IT/Electrical category by

Christopher Rocneanu has joined UnitedSiC incorporated as European Director of Sales starting October 3, 2015. Since the start of his career he has been focused on wide bandgap products in the industrial and automotive market segments. Prior to joining UnitedSiC, Christopher was Rohm’s Business development manager for Europe at ROHM Semiconductor GmbH. He was responsible

As of July 1, 2015 Avnet will distribute and support the United Silicon Carbide full line of switches and diode products. UnitedSiC is proud to have Avnet as a key distributor/partner servicing many key account customers throughout the ASIA PAC region. We see this as a formidable relationship that will lead UnitedSiC and Avnet to

UnitedSiC will be showcasing our new array of newly commercially released diodes, JFETS and Cascode products ranging from 650Volts to 1.2KVolts. UnitedSiC will also be discussing next generation products from 3.3kv through 6.5kv products. UnitedSiC has been developing products for the Power Supply, UPS, power converters for Solar, Wind, EV Charging, Traction markets that focus

United Silicon Carbide, Inc. (UnitedSiC) has been named one of New Jersey’s 2014 50 Fastest Growing Companies. The award program produced by NJBIZ, New Jersey’s premiere business news publication, is presented by ParenteBeard, LLC and sponsored by Comcast Business, Mass Mutual, UnitedHealthcare, Citi and Archer & Greiner. The NJBIZ 50 Fastest Growing Companies awards program