*************************************************************************** * PSPICE Library of USCi 1200V-10A SiC JBS Diode UJ2D1210T * Copyright : United Silicon Carbide, Inc. * Revision : 1.0 * Release Date : 30-Jan-2014 *************************************************************************** * DISCLAIMER: * This model is constructed based on the typical characteristics of * the device shown in the datasheet and is not warranted by USCi as * fully representing all of the specifications and operating * characteristics of the device. The bipolar injection characteristic * of the device has not been modelled. This model is valid for the * temperature range of -55°C to 175°C. * This model is intended for use by customers in the design of * electrical circuits using USCi SiC products. No responsibility for * inaccuracies can be assumed by USCi. USCi does not assume any liability * arising out of the use of the data or circuits builts therefrom. USCi * reserves the right to make any change to the model without prior notice. *************************************************************************** .subckt UJ2D1210T nAnode nCathode La nAnode na 6n Rla nAnode na 200 D1a na nk Dtemp Gleak na nk value={-Ir_Io(TEMP+273.15)*exp(V(nk,na)*Ir_alpha(TEMP+273.15))} Lk nk nCathode 1n Rlk nk nCathode 200 .MODEL Dtemp D + IS=1.100E-16 + N=1.03 XTI=7 + RS=.047 TRS1=7.8831e-3 TRS2=4.1837e-5 + BV = 1800 IBV =1e-10 TBV1=1e-4 + CJO=6.36e-10 + M=.45 + VJ=1.25 + FC=0.999 + TT=254.33E-12 .FUNC Ir_Io(tmp) {-4.968e-18*pwr(tmp,4)+4.667e-15*pwr(tmp,3)-1.192e-12*tmp*tmp+2.697e-11*tmp+1.5897e-8} .FUNC Ir_alpha(tmp) {-3.507e-11*pwr(tmp,3)+1.263e-8*tmp*tmp+1.385e-6*tmp+7.214e-3} .ends