How to achieve the optimum combination of price and performance using 750V SiC FETs
UnitedSiC FETs helped achieve 99.3% system efficiency with three devices in parallel
Learn how to design a simple, highly efficient Totem-pole PFC
Learn how the new 750V SiC FETs deliver industry-leading performance and ultimate design flexibility
Discover how UnitedSiC 750V SiC FETs enable a simple, highly efficient and cost-effective Totem-pole PFC design
Learn how a simple RC snubber can effectively control turn-off VDS spikes and ringing of SiC devices
"UnitedSiC was the perfect match for our output stage architecture."
If you haven’t found it yet, UnitedSiC’s free-to-use web-based FET-Jet calculator has been a revelation – it makes selection of…
It’s sometimes funny how things improve or worsen depending on your perspective. The perfect switch existed from the day electricity…
Comparing data sheets for SiC switches can be difficult. SiC MOSFETs can appear to be at an advantage with a lower temperature coefficient of on-resistance, but this is an indicator of higher underlying losses and overall lack of efficiency compared with UnitedSiC FETs.
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