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Designer’s Guide to Using SiC FETs From UnitedSiC
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Watch VideoMultiple SiC FET options enable more design flexibility
How to achieve the optimum combination of price and performance using 750V SiC FETs
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Pre-Switch case study
UnitedSiC FETs helped achieve 99.3% system efficiency with three devices in parallel
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Enabling 99.3% efficiency in 3.6kW Totem-pole PFC
Learn how to design a simple, highly efficient Totem-pole PFC
Announcing Industry-best 6mΩ 750V Gen 4 SiC FETs
Learn how the new 750V SiC FETs deliver industry-leading performance and ultimate design flexibility
Enabling 99.3% efficiency in 3.6kW Totem-pole PFC using 750V SiC FETs
Discover how UnitedSiC 750V SiC FETs enable a simple, highly efficient and cost-effective Totem-pole PFC design
Minimizing EMI and switching loss for fast SiC FETs
Learn how a simple RC snubber can effectively control turn-off VDS spikes and ringing of SiC devices
"UnitedSiC was the perfect match for our output stage architecture."
Andre Willis
CTO, Pre-Switch
UnitedSiC’s FET-Jet calculator v2 – soaring to new heights
If you haven’t found it yet, UnitedSiC’s free-to-use web-based FET-Jet calculator has been a revelation – it makes selection of…
Rediscovering the perfect switch with SiC FETs
It’s sometimes funny how things improve or worsen depending on your perspective. The perfect switch existed from the day electricity…
SiC FET on-resistance variation with temperature – making the right comparison
Comparing data sheets for SiC switches can be difficult. SiC MOSFETs can appear to be at an advantage with a lower temperature coefficient of on-resistance, but this is an indicator of higher underlying losses and overall lack of efficiency compared with UnitedSiC FETs.
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