Monthly Archives: December 2015

United Silicon Carbide Wins Prestigious R&D100 Award for 6.5kV Enhancement-Mode SiC Devices

United Silicon Carbide Inc. (UnitedSiC) teamed with Sandia National Laboratories and the U.S. Dept. of Energy, Office of Electricity Delivery and Energy Reliability, Energy Storage Program to develop a 6.5kV rated Enhancement-Mode SiC JFET switch that demonstrates 20X lower switching losses than existing 6.5kV rated Si-IGBTs. The product was recognized in the IT/Electrical category by


December 10, 2015