Monthly Archives: December 2015

United Silicon Carbide Inc. (UnitedSiC) teamed with Sandia National Laboratories and the U.S. Dept. of Energy, Office of Electricity Delivery and Energy Reliability, Energy Storage Program to develop a 6.5kV rated Enhancement-Mode SiC JFET switch that demonstrates 20X lower switching losses than existing 6.5kV rated Si-IGBTs. The product was recognized in the IT/Electrical category by
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