Monthly Archives: November 2018

By Dr. Anup Bhalla, VP Engineering at UnitedSiC   Physics both gives and takes away. Devices built with materials that exhibit wide band-gaps, such as silicon carbide (SiC), offer designers the gift of transistors that can sustain high power densities thanks to their combination of low conduction and switching losses, high operating junction temperatures and

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November 12, 2018

November 5, 2018, Princeton, New Jersey: UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, announces the launch of its UF3C FAST series of 650 V and 1200 V high-performance silicon carbide FETs in a standard TO-247-3L package. The FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series. Based

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November 5, 2018