“We developed SiC power modules optimized for power conversion systems using UnitedSiC FET because they have an excellent advantage on high gate-source threshold voltage, low RDS(ON), and high transconductance performance. Also, we appreciated UnitedSiC engineering team’s excellent technical support as they provided performance test support for our power module samples in their lab and advised us on the optimum value of RC snubber, making it helpful for us to make a high-performance SiC power module”