Generations in human terms come by pretty slowly, in living memory from ‘boomer’ thru X to millennials (Y?) and Z,…

Wide band-gap semiconductors of different technologies in power converters are often compared by which has the fastest switching speed or…

UnitedSiC (now Qorvo) now offers its market-leading 750V SiC FETs in a D2PAK-7L surface-mount package, opening up new applications and setting a new performance standard.

Devices at 1200V are now available in Gen 4 technology in a selection of on-resistance ratings to suit a wide range of applications that typically use an 800V bus. Finding your power design sweet spot has never been easier.

The totem-pole power factor correction technique has come of age with wide band-gap semiconductors, releasing its full potential when paired with very low loss SiC FETs.

The totem-pole power factor correction circuit has been an idea in search of a technology to implement it effectively. Now SiC FETs are found to be ideal switches to get the maximum benefit from the topology.

Power converter performance often comes down to efficiency and cost. SiC FET technology delivers on both counts, proven by practical examples and supported by simulation tools.

As we approach the ideal semiconductor switch with hyper-fast edge rates, voltage overshoots and ringing start to be a problem. A simple RC snubber for SiC FETs solves the problem and yields further efficiency gains.

There are lots of parameters to trade-off in the design of a power converter. UnitedSiC makes evaluation easy with their FET-JET Calculator and wide range of parts.

Mechanical circuit breakers are low-loss, but are also slow and wear out. Solid-state solutions with SiC FETs solve these problems with losses that are set to fall.

The momentum behind electric vehicles has reached an inflexion point, it is hard to picture a future in which EVs are not a significant presence on our roads. This changes a lot, not just our buying preferences and driving habits, but the way we think about mobility.

Power converter efficiency gains are ever harder to achieve and measure. SiC FETs give a guaranteed improvement in all designs.

Feedback is a good thing – control engineers want it to be negative with a decent gain and phase margin,…

If you haven’t found it yet, UnitedSiC’s free-to-use web-based FET-Jet calculator has been a revelation – it makes selection of…

It’s sometimes funny how things improve or worsen depending on your perspective. The perfect switch existed from the day electricity…

Power supply design tools are continually improving, with simulation increasingly able to output accurate waveforms and performance in terms of…

Through a combination of different attributes, Silicon Carbide (SiC) has established itself as the premier semiconductor technology for the electric vehicle (EV) sector…

Comparing data sheets for SiC switches can be difficult. SiC MOSFETs can appear to be at an advantage with a lower temperature coefficient of on-resistance, but this is an indicator of higher underlying losses and overall lack of efficiency compared with UnitedSiC FETs.

The increase in demand for high efficiency, high power density and system simplicity makes silicon carbide (SiC) FETs an appealing choice for power engineers due to their fast switching speed, low RDS(on) and high voltage rating.

Wide band-gap semiconductors have already shown their advantages in power switching applications but have not yet made inroads into the very high voltage/high power area where IGBTs are dominant. However, ‘Supercascodes’ using SiC FETs are set to challenge the status quo.

Electric vehicles seem to be the realization of decades of futuristic ambitions, but actually, in 1900 they outnumbered gas-powered vehicles by nearly two to one. Today, EVs are finally taking their place again as serious contenders in the vehicle market, enabled by advances in motors, batteries, chargers and the electronics that interconnect them.

Mechanical switches and actuators are becoming a thing of the past in modern vehicle cockpits. Under the hood, mechanical switching and isolation of high current and voltage connections can now also be replaced by latest SiC semiconductors.

EV uptake is set to increase but ‘range anxiety’ and charge times are still barriers to general acceptance. Wide bandgap semiconductors are enablers for more efficient motor drives and faster charging and new SiC FETs are best performers.

Cloud computing is a myth. That’s not to say that it doesn’t exist, or it doesn’t work, or it hasn’t…

When you think about it, we live in an atypical world. We often hear or use the word ‘typical’ in a way that is synonymous with ‘average’, but in statistical terms, there is guarantee of average occurring even once, so forget about it being typical.

With the pace of innovation in sectors like EV, renewable energy and 5G increasing at a rate of knots, engineers are increasingly looking for new solutions and demanding…

New generations of semiconductor switch technology appear faster and faster and SiC is no exception. In its infancy still, next generations of this wide band-gap technology promise further improvements in efficiency, size and cost in many application areas.

By Dr. Anup Bhalla, VP Engineering at UnitedSiC
When it comes to selecting the right power transistor technology for a new or existing design, it should never be a ‘no-brainer’, even when it appears that the key figures of merit are compelling.

Author: Anup Bhalla Data-centers are big. Really, really big. Do an image search for “data-centers” and you will get back…

Silicon carbide semiconductor switches have many attributes that make them serious contenders to replace IGBTs in EV inverter applications. Conduction…

As the speed of automotive invention accelerates beyond what Henry Ford could ever have imagined, automotive engineers are finding themselves…

Why SiC FETs are the right choice. We all know silicon will be around for some time, but as power…

Abstract Semiconductor lead forming is necessary in many designs. This blog talks about pitfalls to avoid and recommendations to follow…

What would you do with $19 billion? According to the Natural Resources Defense Council, that’s what was paid in 2015…

By Dr. Anup Bhalla, VP Engineering at UnitedSiC Physics both gives and takes away. Devices built with materials that exhibit…

By Dr. Anup Bhalla, VP Engineering at UnitedSiC You’re going to need a better oscilloscope… The latest SiC switches are…

By Zhongda Li, NPI Manager at UnitedSiC Why SiC cascodes make a great solution for switching circuit topologies Anyone who’s…

By Zhongda Li, NPI Manager at UnitedSiC The shift to electric traction for vehicles is well under way, with companies…

By Zhongda Li, Staff R&D Engineer There’s no beating the laws of physics. Resistors are going to dissipate electrical energy…

By Christopher Rocneanu, Technical Business Development at UnitedSiC and Firas Hijjawi, Deep Sea Electronics Power division team leader Efficiency is…

The economics of large solar farms are based on making money by selling energy to the grid. Energy-conversion efficiency and…

By Anup Bhalla, VP Engineering at UnitedSiC The cascode has proved to be a very useful structure since it was…

By Anup Bhalla, VP Engineering at UnitedSiC Silicon carbide has offered plenty of promise as a power-semiconductor wonder material, but…

By Christopher Rocneanu, Director of Sales EMEA & NA at UnitedSiC Switched-mode topologies have come to dominate today’s power conversion…

By Jonathan Dodge, P.E., Senior Applications Engineer at UnitedSiC If electric vehicles are to deliver their full potential for decarbonizing…