Allows designers to quickly, easily evaluate UnitedSiC devices in a variety of circuit topologies
Industry’s first 750V devices set performance benchmarks for high-growth power applications.
UnitedSiC devices now available from one of the world’s biggest, highest-rated distributors.
Enables engineers to build switching circuits with greater efficiency and higher power density in space constrained applications.
New UF3SC series of FAST 650V and 1200V SiC FETs deliver increased efficiency and lower losses; finalist for ELEKTRA 2020 Automotive Electronics Product of the Year.
UnitedSiC and ADI, who have been collaborating on SiC-based products and devices for more than two years, announced a long-term strategic investment and supply agreement to strengthen ADI’s power portfolio.
UnitedSiC’s 6″ FETs meet the demanding stress tests for use within the automotive industry.
UnitedSiC releases first 4″ cascode switches delivering improved performance, reliability and compatibility with conventional gate drivers.
Developed unique method of forming a low backside contact resistance with a laser technique, which enables the use of thin wafer technology and provides lower electrical and thermal resistance.
United Silicon Carbide Inc. (USCi), releases its portfolio of 1200V Silicon Carbide JFET product in die form and TO247 packages. The breakthrough United Silicon Carbide xJ series of 1200V JFETs are the industry’s lowest RDS(on) SiC transistor device. This market milestone for silicon carbide enables best in class converter and inverter system efficiency through incorporating the lowest figure of merit ( FOM) switch commercially available. The depletion mode xJ JFET series takes advantage of silicon carbide’s significantly superior performance over silicon, offering the user the best wide bandgap switch at standard 175°C Tj max. When appropriately packaged, the xJ series is capable of operating at temperatures of 250°C and beyond.
United Silicon Carbide Inc. (USCi), releases its first wave of 650V Silicon Carbide JBS product in die form and TO220. USCi xR series SiC Schottky Barrier diodes deliver market leading efficiency improved, thermal characteristics, and lower Figures of Merit (Q c x V f). The result is a series of products delivering breakthrough efficiency in PFC and Boost stages over all load conditions.
UnitedSiC initiated installation of its leading edge SiC processes in a domestic 6” foundry. Moving forward, strong foundry partnerships will enable UnitedSiC to scale significantly by supporting SiC processes in high-volume silicon fabs.
UnitedSiC processes were successfully installed at a commercial foundry using the largest substrate (4”) available at the time. The resulting products delivered highly differentiated functionality, and improved power efficiency, based on a lower cost switch solution using the UnitedSiC core JFET technology.
UnitedSiC built a pilot production cleanroom near Princeton NJ, to enhance the SiC processes to the stage where they could be directly installed in a commercial foundry. At this point, UnitedSiC became a fabless company enabling fast, efficient company growth.
UnitedSiC was founded by a small team of researchers at Rutgers University in 1999. This was in the days when Silicon Carbide (SiC) technology was still in its infancy, and devices were being manufactured in the research lab on thumbnail sized pieces of SiC.
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