[WEBINAR] Minimizing EMI and switching loss for fast SiC FETs

Webinar: Minimizing EMI and switching loss on SiC FETs



Join this webinar to discover how a simple RC snubber can effectively control turn-off VDS spikes and ringing of SiC devices and be “surprisingly” more efficient than using a high Rgoff resistor.  Also, we’ll show how the snubber resistor loss can be much smaller than the conventional calculation, therefore allowing the use of SMD resistors.  Waveforms and switching loss data will demonstrate the excellent performance of SiC devices with a small RC snubber.  Finally, we will show how using a snubber can improve the dual compatibility of fast SiC devices.




  • Mike Zhu
    Applications Engineer
    Mike Zhu is an application engineer at UnitedSiC Inc. He received his BS in Electrical Engineering from Chongqing University in 2013, and MS in Electrical & Computer Engineering from The Ohio State University in 2015 and joined UnitedSiC since then. He has 7 year’s research experience in SiC and GaN device evaluation, design of high frequency, high efficiency and high power density power electronics as well as EMI solutions for WBG devices.