[WEBINAR] SiC FETs: Easily Driving Higher Power Density

Webinar: Driving Higher Power Density



Join the webinar to discover how the pursuit for lower RDS(on) in SiC FET devices is helping power designers successfully deliver next-generation performance and innovation through higher efficiency, lower losses, smaller form factors and reduced total cost.

  • Introducing new UF3SC SiC FETs – RDS(on) <10mΩ
  • The cascode technology “secret sauce”
  • New design possibilities
    • EV inverter
    • Fast battery charging
    • Solar inverter
    • Circuit protection
  • Design support/content
  • Q & A


  • Zhongda Li, Ph.D
    Senior Staff R&D Engineer
    Zhongda Li, Ph.D, Senior Staff R&D Engineer UnitedSiC Inc, received his B.S in Physics from Peking University in 2007, and Ph.D in Electrical Engineering from Rensselaer Polytechnic Institute in 2013, and joined UnitedSiC since then. He has over 10 years’ research experience in SiC and GaN device technologies, as well as product developments mainly focused on SiC JFETs and cascodes. He has published more than 30 technical papers and holds 4 US patents.