United Silicon Carbide is situated along New Jersey’s Einstein Alley within minutes of Princeton and Rutgers Universities.


Our 10,000 square foot manufacturing facility is fully equipped with a Class 100 clean room for design, fabrication, testing, and packaging of electronic and optoelectronic devices.


USCI’s class-100 advanced R&D clean room is equipped with a complete line of facilities including:


Epitaxial growth

Wet processing


Multiple layer thin film sputtering

Dry etching

PECVD deposition

Controlled and rapid annealing >1700°C

Automated wafer dicing up to 6″


USCi partners with the necessary power packaging and testing expertise for manufacture of high volume commercial discrete product portfolios


  • “UnitedSiC’s SiC technology is focused on driving cost parity with competing Silicon technologies while delivering superior performance.”

    Anup Bhalla
  • “UnitedSiC’s SiC Switch solutions provide superior performance to competing SiC MOSFETs while using up to 25% of the SiC content.”

    Jeff Knapp
  • “UnitedSiC’s fabless manufacturing model enables us to always provide best-in-class devices at an exceptional value to our customers.”

    Chris Dries