UJ4C SiC FET Series

UJ4C SiC FETs

Based on a unique cascode configuration, the UJ4C Gen 4 SiC FET series is rated at 750V while delivering industry-best performance figures of merit that lower conduction losses and increase efficiency at higher speed, all while improving overall cost effectiveness. Switching performance and Qrr are improved as are Eon and Eoff losses at every given RDS(on). In addition, reduced levels in Eoss and Coss deliver lowest total losses.  These devices can be safely driven with standard 0V to 12V or 15V gate drive voltage. Good threshold noise margin is maintained with a true 5V threshold voltage and, like previous generations, these new SiC FETs can be operated from all the typical Si IGBT, Si MOSFET and SiC MOSFET drive voltages.  They also include a built-in ESD gate protection clamp.  All devices are AEC-Q101 qualified.

Features
  • 750V
  • Low RDS(on) from 18mohm to 60mohm
  • Excellent reverse recovery
  • Low body diode
  • Low gate charge
  • Low intrinsic capacitance
  • ESD protected, HBM class 2
  • Industry standard through-hole and surface mount packaging
UJ4C SiC FET Series Selector Guide
Part # Package V RDS(on) typ
(mΩ)
ID Max (A) Data Sheet SPICE Model Buy Now Generation
TO-247-3L 750 18 81 Buy Now 4
TO-247-4L 750 18 81 Buy Now 4
TO-247-3L 750 58 28 Buy Now 4
TO-247-4L 750 58 28 Buy Now 4
Part # Package V RDS(on) typ
(mΩ)
ID Max (A) Data Sheet SPICE Model Buy Now Generation

1. For all die inquiries, contact sales@unitedsic.com.

2. For Part Number Decoder, click here.

3. Star icons indicate new products.