Learn how to design a simple, highly efficient Totem-pole PFC
UnitedSiC FETs facilitated an increase in efficiency and 30% reduction in losses
Learn how to quickly identify the optimal SiC device for your power topology
Explore performance benchmarking, key specifications, switching behavior and more
Introducing the industry’s first 750V high-performance SiC FETs
Learn how a simple RC snubber can effectively control turn-off VDS spikes and ringing of SiC devices
“We developed SiC power modules optimized for power conversion systems using UnitedSiC FET because they have an excellent advantage on high gate-source threshold voltage, low RDS(ON), and high transconductance performance. Also, we appreciated UnitedSiC engineering team’s excellent technical support as they provided performance test support for our power module samples in their lab and advised us on the optimum value of RC snubber, making it helpful for us to make a high performance SiC power module.”
Chief Executive Officer, SemiPowerEx
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Comparing data sheets for SiC switches can be difficult. SiC MOSFETs can appear to be at an advantage with a lower temperature coefficient of on-resistance, but this is an indicator of higher underlying losses and overall lack of efficiency compared with UnitedSiC FETs.
Through a combination of different attributes, Silicon Carbide (SiC) has established itself as the premier semiconductor technology for the electric vehicle (EV) sector…
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