SiC FETs: Easily Driving Higher Power Density

July 28, 2020

Join the webinar to discover how the pursuit for lower RDS(on) in SiC FET devices (wide bandgap) is helping power designers successfully deliver next-generation performance and innovation through higher efficiency, lower losses, smaller form factors and reduced total cost versus silicon MOSFETs and other silicon carbide MOSFETs.

Agenda:

• Introducing new UF3SC SiC FETs – RDS(on) less than 10mΩ
• The cascode technology “secret sauce”
• New design possibilities
• EV inverter
• Fast battery charging
• Solar inverter
• Circuit protection
• Design support/content