UF3C065080B7S
UF3C065080B7S
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.
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- On-resistance RDS(on): 85mΩ (typ)
- Operating temperature: 175°C (max)
- Excellent reverse recovery: Qrr = 69nC
- Low body diode VFSD: 1.54V
- Low gate charge: QG = 23nC
- Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive
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