UF3C120080K4S

1200V-80mΩ SiC FET

UF3C120080K4S

United Silicon Carbide’s FET products co-package its high-
performance F3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247- package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

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Features
  • Typical on-resistanceRDS(on),typ of 80mΩ
  • Maximum operating temperature of 175°C
  • Excellent reverse recovery
  • Low gate charge
  • Low intrinsic capacitance
  • ESD protected, HBM class 2
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