UF3C120150K4S
1200 V, 150 mohm SiC FET
Key Features
- On-resistance (RDS(on)): 150 mohm (typ)
- Maximum operating temperature: 175 °C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
| Mouser | 62 | Buy Online > | |
| RELL | 0 | Buy Online > | |
| RFMW | 50 | Buy Online > |
Qorvo's UF3C120150K4S 1200 V, 150 mohm SiC FET products co-package its high-performance F3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
Typical Applications
- EV Charging
- PV Inverters
- Switched-Mode Power Supplies
- Power Factor Correction Modules
- Motor Drives
- Induction Heating
Product Categories
Application Categories
- Applications> Industrial> Pumps & Compressors
- Applications> Industrial> Robotics
- Applications> Renewables, Power & Lighting> Backup Power Systems / UPS Units
- Applications> Automotive> EV Charging
- Applications> Automotive> EV Powertrains
- Applications> Industrial> Industrial Battery Chargers
- Applications> Information Technology> Server & Telecom Power Supplies
- Applications> Renewables, Power & Lighting> Energy Storage Systems
- Applications> Renewables, Power & Lighting> AC/DC & High-Voltage DC/DC Power Supplies
- Applications> Renewables, Power & Lighting> Solar Power
| VDS Max(V) | 1,200 |
| RDS(on) Typ @ 25C(mohm) | 150 |
| ID Max(A) | 18.4 |
| Generation | Gen 3 |
| Tj Max(°C) | 175 |
| Automotive Qualification | Yes |
| Package Type | TO-247-4L |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
This product appears in the following application block diagrams: