UJC1210K
1200 V, 100 mohm SiC FET
Key Features
- On-resistance (RDS(on)): 100 mohm (typ)
- Standard 12V gate drive w PV inverters
- Maximum operating temperature: 150 °C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
Qorvo's UJC1210K is a 1200 V, 100 mohm RDS(on) SiC FET products co-package its xJ series high-performance SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in a TO-247-3L package, these devices are excellent for switching inductive loads, and any application requiring standard gate drive.
Typical Applications
- EV Charging
- PV Inverters
- Switched-Mode Power Supplies
- Power Factor Correction Modules
- Motor Drives
- Induction Heating
Product Categories
Application Categories
- Applications> Industrial> Pumps & Compressors
- Applications> Industrial> Robotics
- Applications> Renewables, Power & Lighting> Backup Power Systems / UPS Units
- Applications> Automotive> EV Charging
- Applications> Automotive> EV Powertrains
- Applications> Industrial> Industrial Battery Chargers
- Applications> Information Technology> Server & Telecom Power Supplies
- Applications> Renewables, Power & Lighting> Energy Storage Systems
- Applications> Renewables, Power & Lighting> AC/DC & High-Voltage DC/DC Power Supplies
- Applications> Renewables, Power & Lighting> Solar Power
| VDS Max(V) | 1,200 |
| RDS(on) Typ @ 25C(mohm) | 100 |
| ID Max(A) | 21.5 |
| Generation | Gen 1 |
| Tj Max(°C) | 150 |
| Automotive Qualification | No |
| Package Type | TO-247-3L |
| RoHS | Yes |
| Lead Free | No |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |