UnitedSiC’s UJ3C Silicon Carbide FETs make the 2018 Elektra Awards automotive product shortlist





October 12, 2018, Princeton, New Jersey: UnitedSiC has been shortlisted as a finalist in the prestigious 2018 Elektra Awards, organized by the UK’s leading magazine for electronics professionals, Electronics Weekly.

UnitedSiC is competing among a group of seven finalists for the Excellence in Product Design for Automotive category, including ON Semiconductor, Texas Instruments and Analog Devices. The Excellence in Product Design for Automotive award recognizes the most innovative product designs that have made a significant impact in the automotive market over the past year.



UJ3C Series of 1200 V Silicon Carbide FETs


Key benefits:

  • Low RDS(on) – reduces conduction loss
  • Flexible gate drive – easy, drop-in replacement of IGBT, Si or other SiC MOSFET designs or use 0 V to 12 V simple gate drives and save BOM cost
  • Low thermal resistance – allows higher RMS currents delivering more output power
  • ESD protection – protected to HBM Class 2, insures overvoltage spikes on gate are clamped

As efficient battery charging and power conversion is key to the development of electrically powered vehicles (EVs), designers of such systems are looking for ‘enabling components’ that make them simpler to design and more effective in operation. Offering a true ‘win-win’ proposition, UnitedSiC’s silicon carbide (SiC) FETs deliver the industry’s highest-performance upgrade path for IGBT, Si and SiC-MOSFET users, while offering a simple drop-in replacement without changes to the gate drive voltage. Accordingly, designers of electric vehicle onboard battery charging (OBC) systems can easily upgrade existing system performance by using the UJ3C series from UnitedSiC.


For more information about UnitedSiC’s SiC FET portfolio, please visit


The Elektra Awards will take place on December 5, 2018 in London.