UF3C065030B3

650V-27mΩ SiC FET

UF3C065030B3

United Silicon Carbide’s FET products co-package its high-performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.

Features
  • Typical on-resistanceRDS(on),typ of 27mΩ
  • Maximum operating temperature of 175°C
  • Excellent reverse recovery
  • Low gate charge
  • Low intrinsic capacitance
  • ESD protected, HBM class 2