650V-27mΩ SiC FET
United Silicon Carbide’s UF3C065030B3 650V-27mΩ SiC FET products co-package its high-performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices come in a D2PAK-3L package and are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.
Sign up for our quarterly newsletter and receive important technical information on all new products, app notes, white papers, and blogs.