United Silicon Carbide Inc. UF3C065030T3S - United Silicon Carbide Inc.

UF3C065030T3S

United Silicon Carbide’s FET products co-package its high-
performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.

Download datasheet
Download Spice model
Download Package Drawing

Buy Now

Select your distributor

Digi-Key
Mouser Electronics
Richardson Electronics

Features

Typical on-resistanceRDS(on),typ of 27mΩ
Maximum operating temperature of 175°C
Excellent reverse recovery
Low gate charge
Low intrinsic capacitance
ESD protected, HBM class 2

UF3C065030T3S

UF3C065030T3S

Stay Informed