UF3C065040K3S

650V-42mΩ SiC FET

UF3C065040K3S

United Silicon Carbide’s FET products co-package its high-
performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RCsnubbers, and any application requiring standard gate drive.

Features
  • Typical on-resistance RDS(on),typ of 42mΩ
  • Maximum operating temperature of 175°C
  • Excellent reverse recovery
  • Low gate charge
  • Low intrinsic capacitance
  • ESD protected, HBM class 2