UF3C065040K4S
650V-42mΩ SiC FET
UF3C065040K4S
United Silicon Carbide’s UF3C065040K4S 650V 42mΩ RDS(on) cascode SiC FET products co-package its high-performance G3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
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- Typical on-resistanceRDS(on),typ of 42mΩ
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
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