United Silicon Carbide Inc. UF3C065040K4S - United Silicon Carbide Inc.

UF3C065040K4S

United Silicon Carbide’s FET products co-package its high-
performance F3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247- package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

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Digi-Key
Mouser Electronics
Richardson Electronics

Features

Typical on-resistanceRDS(on),typ of 42mΩ
Maximum operating temperature of 175°C
Excellent reverse recovery
Low gate charge
Low intrinsic capacitance
ESD protected, HBM class 2

UF3C065040K4S

UF3C065040K4S

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