UF3C065080B3

650V-80mΩ SiC FET

UF3C065080B3

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction  devices. Available in the D2PAK-3L package, this device exhibits ultra low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.

Features
  • Typical on-resistance RDS(on),typ of 80mΩ
  • Maximum operating temperature of 175°C
  • Excellent reverse recovery
  • Low gate charge
  • Low intrinsic capacitance
  • ESD protected, HBM class 2