1200V-35mΩ SiC FET
United Silicon Carbide’s UF3C120040K3S 1200V 35mΩ RDS(on) cascode SiC FET products co-package its high-performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are available in a TO-247-3L package and are excellent for switching inductive loads, and any application requiring standard gate drive.
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