UF3C120150B7S

UF3C120150B7S

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

Features
  • On-resistance RDS(on): 150mΩ (typ)
  • Operating temperature: 175°C (max)
  • Excellent reverse recovery: Qrr = 67nC
  • Low body diode VFSD: 1.46V
  • Low gate charge: QG = 25.7nC
  • Threshold voltage VG(th): 4.4V (typ) allowing 0 to 15V drive