1200V-150mΩ SiC FET
United Silicon Carbide’s UF3C120150K4S 1200V-150mΩ SiC FET products co-package its high-performance F3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
Sign up for our quarterly newsletter and receive important technical information on all new products, app notes, white papers, and blogs.