650V-27mΩ SiC FET
United Silicon Carbide’s UJ3C065030K3S 650V 27mΩ RDS(on) SiC FET products co-package its high-performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. Available in the TO-247-3L package, this device exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
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