UJ3C065080K3S
650V-80mΩ SiC FET
UJ3C065080K3S
United Silicon Carbide’s FET products co-package its high-performance G3 SiC JFETs with a FET optimized
MOSFET to produce the only standard gate drive SiC device
in the market today. This series exhibits ultra-low gate charge,
but also the best reverse recovery characteristics of any
device of similar ratings. These devices are excellent for
switching inductive loads, and any application requiring standard
gate drive.
Buy Now
Select your distributor
Features
- Typical on-resistance RDS(on), typ of 80mΩ
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
Stay Informed
Sign up for our quarterly newsletter and receive important technical information on all new products, app notes, white papers, and blogs.
© 2021 UnitedSiC. All rights reserved.
