UJ3C065080K3S

650V-80mΩ SiC FET

UJ3C065080K3S

United Silicon Carbide’s FET products co-package its high-performance G3 SiC JFETs with a FET optimized
MOSFET to produce the only standard gate drive SiC device
in the market today. This series exhibits ultra-low gate charge,
but also the best reverse recovery characteristics of any
device of similar ratings. These devices are excellent for
switching inductive loads, and any application requiring standard
gate drive.

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Features
  • Typical on-resistance RDS(on), typ of 80mΩ
  • Maximum operating temperature of 175°C
  • Excellent reverse recovery
  • Low gate charge
  • Low intrinsic capacitance
  • ESD protected, HBM class 2
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