United Silicon Carbide Inc. UJ3C065080T3S - United Silicon Carbide Inc.

UJ3C065080T3S

United Silicon Carbide’s FET products co-package its high-
performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

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Digi-Key
Mouser Electronics
Richardson Electronics

Features

Typical on-resistanceRDS(on),typ of 80mΩ
Maximum operating temperature of 175°C
Excellent reverse recovery
Low gate charge
Low intrinsic capacitance
ESD protected, HBM class 2

UJ3C065080T3S

UJ3C065080T3S

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