UJ3C120040K3S

1200V-35mΩ SiC FET

UJ3C120040K3S

United Silicon Carbide’s UJ3C120040K3S 1200V 35mΩ RDS(on) SiC FET products co-package its high-performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in a TO-247-3L package, these devices are excellent for switching inductive loads, and any application requiring standard gate drive.

Features
  • Typical on-resistanceRDS(on),typ of 35mΩ
  • Maximum operating temperature of 175°C
  • Excellent reverse recovery
  • Low gate charge
  • Low intrinsic capacitance
  • ESD protected, HBM class 2