UJ3C120070K4S

1200V-70mΩ SiC FET

UJ3C120070K4S

The UJ3C120070K4S is a 1200V, 70mΩ G3 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Features
  • On-resistance RDS(on): 70mΩ (typ)
  • Operating temperature: 175°C (max)
  • Excellent reverse recovery: Qrr = 113nC
  • Low body diode VFSD: 1.41V
  • Low gate charge: QG = 46nC
  • Threshold voltage VG(th): 5.0V (typ) allowing 0 to 15V drive