UJ3C120080K3S
1200V-80mΩ SiC FET
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UJ3C120080K3S
United Silicon Carbide’s UJ3C120080K3S 1200V 80mΩ RDS(on) SiC FET products co-package its high-performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in the TO-247-3L package, these devices are excellent for switching inductive loads, and any application requiring standard gate drive.
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- Typical on-resistanceRDS(on),typ of 80mΩ
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
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