UJ3C120080K3S

1200V-80mΩ SiC FET

Not recommended for new designs. Please use UJ3C120070K3S.
If you would like technical support, contact us at sales@unitedsic.com

UJ3C120080K3S

United Silicon Carbide’s FET products co-package its high-
performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

Buy Now
Features
  • Typical on-resistanceRDS(on),typ of 80mΩ
  • Maximum operating temperature of 175°C
  • Excellent reverse recovery
  • Low gate charge
  • Low intrinsic capacitance
  • ESD protected, HBM class 2
fet

Quickly evaluate and identify the optimal SiC device for your power topology

Start Designing Now
fet

Important FET design considerations and RC snubber recommendations

Read Before Designing
Products
Solutions
Design Resources
About
Support
© 2021 UnitedSiC. All rights reserved.