UJ3C120150K3S
1200V-150mΩ SiC FET
UJ3C120150K3S
United Silicon Carbide’s FET products co-package its high-
performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
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Features
- Typical on-resistanceRDS(on),typ of 150mΩ
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
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