UJ3C120150K3S
1200V-150mΩ SiC FET
UJ3C120150K3S
The UJ3C120150K3S 1200V 150mΩ SiC FET products co-package its high-performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.
Select your distributor
- Typical on-resistanceRDS(on),typ of 150mΩ
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
Stay Informed
Sign up for our quarterly newsletter and receive important technical information on all new products, app notes, white papers, and blogs.
