UJ4SC075009K4S

750V-9mΩ SiC FET

UJ4SC075009K4S

The UJ4SC075009K4S is a 750V, 9mΩ G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Features
  • On-resistance RDS(on): 9mΩ (typ)
  • Operating temperature: 175°C (max)
  • Excellent reverse recovery: Qrr = 322nC
  • Low body diode VFSD: 1.1V
  • Low gate charge: QG =75nC
  • Threshold voltage VG(th): 4.5V (typ) allowing 0 to 15V drive