650V-45mΩ SiC FET
United Silicon Carbide’s UJC06505K 650V 45mΩ RDS(on) SiC FET products co-package its xJ series high-performance SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in a TO-247-3L package, these devices are excellent for switching inductive loads, and any application requiring standard gate drive.
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