UJC1210K

1200V-100mΩ SiC FET

UJC1210K

United Silicon Carbide’s FET products co-package its xJ
series high-performance SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

Features
  • Max. on-resistance RDS(on)max of 100mΩ
  • Standard 12V gate drive w PV inverters
  • Maximum operating temperature of 150°C
  • Excellent reverse recovery
  • Low gate charge
  • Low intrinsic capacitance