UF3N090800

900V-735mΩ SiC Normally-on JFET

UF3N090800

United Silicon Carbide’s UF3N090800 is a 900V 735mΩ high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.

Features
  • Typical on-resistanceRDS(on),typ of 735mΩ
  • Voltage controlled
  • Maximum operating temperature of 175°C
  • Extremely fast switching not dependent on temperature
  • Low gate charge
  • Low intrinsic capacitance