900V-735mΩ SiC Normally-on JFET
United Silicon Carbide’s UF3N090800 is a 900V 735mΩ high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.
Sign up for our quarterly newsletter and receive important technical information on all new products, app notes, white papers, and blogs.