UJ3N120070K3S
1200V-70mΩ SiC Normally-on JFET
UJ3N120070K3S
United Silicon Carbide’s UJ3N120070K3S is a 1200V 70mΩ high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.
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Features
- Typical on-resistanceRDS(on), typ of 70mΩ
- Voltage controlled
- Maximum operating temperature of 175°C
- Extremely fast switching not dependent on temperature
- Low gate charge
- Low intrinsic capacitance
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