UJN1205K

1200V-45mΩ SiC Normally-on JFET

UJN1205K

United Silicon Carbide, Inc offers the xJ series of high-performance
SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.

Features
  • Low on-resistance RDS(on)max of 0.045Ω
  • Voltage controlled
  • Maximum operating temperature of 175°C
  • Extremely fast switching not dependent on temperature
  • Low gate charge
  • Low intrinsic capacitance