UJN1205K
1200 V, 45 mohm Normally-On SiC JFET
Discontinued >
Possible replacement: UJ3N120035X
Key Features
- Low on-resistance (RDS(on)max) of 0.045 ohm
- Voltage controlled
- Maximum operating temperature: 175 °C
- Extremely fast switching not dependent on temperature
- Low gate charge
- Low intrinsic capacitance
Qorvo's UJN1205K is a 1200 V, 45 mohm RDS(on) high-performance SiC normally-on JFET transistor. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.
Typical Applications
- Over current protection circuits
- DC-AC inverters
- Switched-Mode Power Supplies
- Power Factor Correction Modules
- Motor Drives
- Induction Heating
Product Categories
Application Categories
| VDS Max(V) | 1,200 |
| RDS(on) Typ @ 25C(mohm) | 45 |
| ID Max(A) | 38 |
| Generation | Gen 1 |
| Tj Max(°C) | 175 |
| Automotive Qualification | No |
| Package Type | TO-247-3L |
| RoHS | Yes |
| Lead Free | No |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |