Richardson/UnitedSiC Webinar

5 Design Tips for Easy SiC Implementation

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Title:  5 Design Tips for Easy SiC Implementation

Date:  Available on demand

Duration:  45 minutes


Implementing a silicon carbide-based design can deliver significant efficiency and overall performance improvements to your end system.  In this webinar, we address the different situations power designers might face today when upgrading from a silicon (Si) based design, starting a new silicon carbide (SiC) based design or finding an alternative for an existing SiC design. You’ll be introduced to the newest generation of SiC ICs and learn the key design tips for making the SiC implementation simple, accurate and timely.

Webinar Outline

  • Design situations Si/SiC power designers face today
  • Describe 5 key design tips for easy SiC implementation
  • Present case studies
    • Totem Pole PFC
    • High Voltage Phase Shift Full Bridge
    • Drop-in Replacement for Si Super-Junction MOSFET
  • FAQs


Note:  During the webinar, we will provide links to key technical content to support SiC design implementation

About the Speaker

Zhongda Li


Dr. Zhongda Li is a Senior Staff R&D Engineer working at United Silicon Carbide Inc (UnitedSiC), and is responsible for the research and development of SiC FET and JBS products. Prior to joining UnitedSiC, his PhD research was focused on GaN and SiC MOS power devices. Zhongda holds a PhD degree in EE from Rensselaer Polytechnic Institute and a BS degree in Physics from Peking University.