The LLC demonstrates the effectiveness of the UnitedSiC 650 V FET in a resonant DC-DC converter. Low gate charge and output capacitance combine to yield superior light-load efficiency, while the FET’s low RDS(on) leads in high-load efficiency as well. The LLC converts 400VDC input to isolated 12 VDC output. Peak efficiency exceeds 97.6% over a frequency range of roughly 100 to 200 kHz.
The SiC FET device is a premier primary side solution due to its superior combination of low RDS, low output capacitance, and low gate charge.
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