******************************************************************************** * UnitedSiC G4 1700V-400mohm SiC Cascode Spice Circuit Model rev 2.0 * Copyright 2020 United Silicon Carbide, Inc. * This is a PRELIMINARY Spice Model of UF3C170400K3S * * * The model does not include all possible conditions and effects, * in particular it doesn't include: * Self heating * leakage current in blocking state * Drain to source breakdown is notional only * ******************************************************************************** *** UF3C170400K3S *** .subckt UF3C170400K3S nd ng ns *#ASSOC Category="N-Channel MOSFET" Symbol=nmos Ld nd nd1 5n Lmd ns1 nd2 2n Ljg ng1 ns3 4n Lmg ng ng2 10n Lms ns2 ns3 3n Ls ns3 ns 2n xj1 nd1 ng1 ns1 jfet_G3_1700V_Ron params: Ron=400m Rgon=6 Rgoff=9 xm1 nd2 ng2 ns2 mfet164a Cgd ng2 nd1 2p .ends ******************* 1700V JFETs *********************** .subckt jfet_G3_1700V_Ron d g s params: Ron=0 Rgon=0 Rgoff=0 *#ASSOC Category="N-Channel JFET" Symbol=njfet .param Ron1={Ron} .param Rgon1={Rgon} .param Rgoff1={Rgoff} .param a= {400m / {Ron}} X1 di gi s jfet_G3_1700V params: ascale={a} XCgs gi s Cgs_1700V params: acgs={a} XCgd gi di Cgd_1700V params: acgd={a} Rd d di Rtemp {320m/{a}} .MODEL Rtemp RES (TC1=3.425e-3, TC2=4.292e-5) GRg g gi value={if(v(g,gi)>0,v(g,gi)/{Rgon1},v(g,gi)/{Rgoff1})} .ends *********** Shared Subcircuit for 1700V JFETs ********* .subckt jfet_G3_1700V d g s Params: ascale=0 .param Fc1=0.5 .param Pb1=3.25 .param M1=0.5 .param Vd0=1360 .param gos={1.229e-3*{ascale}} .param gfs={9.39*{ascale}} .param f=1.4 .param vth=-9 .param cgs1=2.1e-10 .param cgd1=6.0e-12 .param bt={({f}*{gfs}+2*{gos}*{Vd0}/{vth})/2/(-{vth})} .param lamd={1*{gos}/{bt}/{vth}/{vth}} .param cgs0={pwr((1+20/{Pb1}),{M1})*{cgs1}} .param cgd0={pwr((1+{Vd0}/{Pb1}),{M1})*{cgd1}} J1 d g s jfet_1700 1e-30 Dgs g s Dgs_iv 1e-30 Dgd g d Dgd_iv 1e-30 Rgs g s 1Meg Rgd g d 10Meg .MODEL jfet_1700 NJF( + Beta={{bt}*1e30} BetaTce=0 Vto={vth} VtoTc=0 lambda={lamd} + Is=1e-30 + Cgs={{cgs0}*{ascale}*1e30} Cgd={{cgd0}*{ascale}*1e30} Fc={Fc1} Pb={Pb1} + M={M1}) .MODEL Dgs_iv D (CJO=0 BV=40 IS=1e-20 ISR=1e-20 Eg=3.5 Rs=0) .MODEL Dgd_iv D (CJO=0 BV=2150 IS=1e-20 ISR=1e-20 Rs={50.8m/{ascale}/1e30}) .ends * Cgs network .subckt Cgs_1700V g s params: acgs=0 .param c0=1n .param vsgmin=-2 .param vsgmax=15 .param a1={0.18n*{acgs}} .param b1=1 .func Qgs1(u) {- {a1} / {b1} *(exp(- {b1} *u)-1)} .param a2={0.15n*{acgs}} .param b2=0.5 .param c2=9.8 .func Qgs2(u) + {if(abs(u)<{vsgmax}, + {a2}*u + {a2}*(-{b2})*log(cosh((u-{c2})/-{b2})) + -{a2}*(-{b2})*log(cosh(-{c2}/-{b2})), + {a2}*{vsgmax} + {a2}*(-{b2})*log(cosh(({vsgmax}-{c2})/-{b2})) + -{a2}*(-{b2})*log(cosh(-{c2}/-{b2})))} E1 s m1 value={v(s,g)-Qgs1(limit(v(s,g),-{vsgmax},{vsgmax}))/{c0}} C01 m1 g {c0} E2 s m2 value={v(s,g)-Qgs2(limit(v(s,g),-{vsgmax},{vsgmax}))/{c0}} C02 m2 g {c0} .ends * Cgd network .subckt Cgd_1700V g d params:acgd=0 .param c0=1n .param a1={0.05n*{acgd}} .param b1=0.1 .param c1=17.6 .param vdgmax1=30 .func Qgd1(u) + {if(abs(u)<{vdgmax1}, + {a1}*u + {a1}*(-{b1})*log(cosh((u-{c1})/-{b1})) + -{a1}*(-{b1})*log(cosh(-{c1}/-{b1})), + {a1}*{vdgmax1} + {a1}*(-{b1})*log(cosh(({vdgmax1}-{c1})/-{b1})) + -{a1}*(-{b1})*log(cosh(-{c1}/-{b1})))} .param a2={0*{acgd}} .param b2=0.5 .param c2=9.5 .param vdgmax2=15 .func Qgd2(u) + {if(abs(u)<{vdgmax2}, + (-1)*({a2}*u + {a2}*(-{b2})*log(cosh((u-{c2})/-{b2})) + -{a2}*(-{b2})*log(cosh(-{c2}/-{b2}))), + (-1)*({a2}*{vdgmax2} + {a2}*(-{b2})*log(cosh(({vdgmax2}-{c2})/-{b2})) + -{a2}*(-{b2})*log(cosh(-{c2}/-{b2}))))} E1 d m1 value={v(d,g)-Qgd1(limit(v(d,g),-{vdgmax1},+{vdgmax1}))/{c0}} C01 m1 g {c0} *E2 d m2 value={v(d,g)-Qgd2(limit(v(d,g),-{vdgmax2},+{vdgmax2}))/{c0}} *C02 m2 g {c0} .ends *** Si MOS Model *** .SUBCKT mfet164a 4 1 2 *Gate-->1 Drain-->4 Src-->2 .param Ascale= 0.895 ***Ascale used to scale the active area of the mosfet.It could be any positive data M1 3 5 9 9 NMOS W={ {Ascale}* 2 } L= 0.00000033 M2 9 5 9 3 PMOS W={ {Ascale}* 2 } L= 0.00000036 Ld 4 7 0.1p Ls 9 2 0.1p Lg 1 8 0.1p R1 7 3 RTEMP { 0.0051021 / {Ascale} } RG 8 5 4.2 CGS 5 9 { 3.575E-10 * {Ascale} } DBD 9 3 DBD ************************************************************************************************************** .MODEL NMOS NMOS (LEVEL = 3 + TOX = 6.00E-08 + NSUB = 3.8E+17 + VTO= 4.5 + THETA = 0 + kp= 1.788E-05 + TPG = 1 ) ************************************************************************************************************** .MODEL PMOS PMOS (LEVEL = 3 + TOX = 6.00E-08 + NSUB = 4.8E+16 + TPG = -1 ) ************************************************************************************************************** .MODEL DBD D (CJO={ {Ascale} * 2.6E-10 } + VJ= 0.7 + M= 0.5 + RS= {0.007/ {Ascale} } + IS= { {AScale} * 1.706E-12 } + TT= 8.00E-09 + BV= 25 + IBV= 0.00025 ) ************************************************************************************************************** .MODEL RTEMP RES (TC1=3E-3) .ENDS *** End of File ***