**************************************************************************
* USCi 1200 V SiC JFET Spice Circuit Model v3.6
* Copyright 2015 United Silicon Carbide, Inc.
* This is an empirical model of USCi 1200 V JFETs based on typical characteristics of
* the device shown in the datasheet and is not warranted by USCi as fully 
* representing all of the specifications and operating characteristics of the device.
* It's accuracy is best in the the linear mode of operation and for switching
* characteristics. The accuracy degrades when used in saturation. 
* It includes temperature effects from 25 to 175 C Junction Temperature.
*
* The model does not include all possible conditions and effects, 
* in particular it doesn't include: 
*	Self heating
*	leakage current in blocking state
*	Drain to source breakdown is notional only
*
* ujn series  Drain Gate Source
**************************************************************************
.SUBCKT  ujn1205k Drain Gate Source PARAMS: 
+ beta=5.28 beta_tce=-30 vth=-7.892 vth_tc=4.0e-4
+ npow=1.4480 npow_tc=-5.000e-04 lambda0=0.05 lambda1=-1.100e-01
+ alpha=1.800 alpha_tc=-3.000e-03 
+ cdsa0=7e-12 cds0=8.82e-12 is0g=1.5000e-14
+ cgda0=40e-12 cgd0=900e-12 cgd_FC=0.94 cgd_M=0.70 cgd_VJ=2.7
+ cgsa0=150e-12 cgs0=1125e-12 cgs_FC=0.94 cgs_M=0.53 cgs_VJ=2.7
*Parasitics
LD Drain D 5n
R_RD D Dint 0.001
LS Source S 3n
R_RS S Sint 0.001
LG Gate G 3n
R_RG G Gint 0.5
R_RGAC1	Gint Gjd 1.5
R_RGAC2	Gjd Gjs 2.75
X_IDS	Gjd Dint Sint IDJFET PARAMS: beta={beta} lambda0={lambda0} lambda1={lambda1}
X_IGS	Gint Gjd Sint  IGATETOSOURCE
*Current
DBDD Gjd Dint DDBRKDWN
DBDS Gjd Sint DSBRKDWN
DDGI Gjd Dint DGI
DDGSI Gjd Sint DGSI
*Capacitance
DGD Gjd Dint Diodecgd
CGDa Gjd Dint {0.5*cgda0}
DGD2 Gjs Dint Diodecgd
CGDb Gjs Dint {0.5*cgda0}
DGS Gjs Sint Diodecgs
CGSa Gjs Sint {0.5*cgsa0}
DGS2 Gjd Sint Diodecgs
CGSb Gjd Sint {0.5*cgsa0}
CDSint Dint Sint {cdsa0}
CGSint Gint Sint 1e-13
CDS D S	1e-13
CGD	G D 1e-13
CGS G S 1e-13

.Model DGI D IS=5.6e-20 N=5.8 XTI=7 ISR=0 NR=2.9 VJ=12.7 CJO=0 Rs=.9
.Model DGSI D EG=3.26 IS=1.500e-14 N=3.71 XTI=15 ISR=0 CJO=0 Rs=.1
.MODEL DDBRKDWN D IS=1e-40 ISR=0 N=1000 IBV=1.133 NBV=4.004e2 BV=1600 TBV1=1e-6 Rs=0.2
.MODEL DSBRKDWN D EG=3.26 IS=1e-40 XTI=1 N=1000 ISR=0 IBV=1.823e-6 NBV=87.54 BV=45 Rs=0.2
.MODEL Diodecgd D IS=1e-40 XTI=1 N=1000 ISR=0 CJO={cgd0} EG=3.26 FC={cgd_FC} M={cgd_M} VJ={cgd_VJ} IKF=0 RS=0.2
.MODEL Diodecgs D IS=1e-40 XTI=1 N=1000 ISR=0 CJO={cgs0} EG=3.26 FC={cgs_FC} M={cgs_M} VJ={cgs_VJ} RS=0.2 
.ENDS ujn1205k

.SUBCKT IGATETOSOURCE 1 2 3 PARAMS: is0g=1.5000e-14
.param is0_tc=0.0000e+00 
.param ngs=3.7100 ngs_tc=0.0020
.param xti=1.5e+01
.param egap=3.2600
.param egapt1=1.0000e+05
.param egapt2=3.3000e-02
.func ratio_t() {(TEMP+273.15)/(300)}
.func vt() {1.38e-23*(TEMP+273.15)/1.602e-19}
.func egap_t() {egap-(egapt2*((TEMP+273.15)*(TEMP+273.15)))/((TEMP+273.15)+egapt1)}
.func is_t() {is0g*PWR(ratio_t(),(xti/ngs)) *EXP((ratio_t()-1)*(egap_t()/(ngs*vt())))}
*.func IGS(vgs) {if(vgs<0, 0,is_t()*(EXP(vgs/(ngs*vt())) - 1))}
.func IGS(vgs) {is_t()*(1)}
G_GS 1 3 VALUE = {IGS(V(2,3))}
.ENDS IGATETOSOURCE

* JFET drain current
.SUBCKT IDJFET Gate Drain Source PARAMS: beta=5.28 beta_tce=-30 vth=-7.892 vth_tc=4.0e-4
+ npow=1.4480 npow_tc=-5.0000e-04 lambda0=0.05 lambda1=-1.1000e-01
+ alpha=1.8000 alpha_tc=-3.0000e-03
* Calculate Temperature Dependent Parameters
.func delta_t() {TEMP - 27}
.func beta_t() {beta*PWR(1.0001, beta_tce*delta_t())}
.func vth_t() {vth * (1 + vth_tc * delta_t())} 
.func npow_t() {npow * (1 + npow_tc * delta_t())}
.func alpha_t() {alpha * (1 + alpha_tc * delta_t())}
* Calculate the terms of the ID equation
.func vod(vgs) {if((vgs-vth_t()>0), (vgs-vth_t()),(vgs-vth_t()-1e-15 ))}
.func npow_term(vgs) {PWR(vod(vgs),npow_t())}
**(1+lambda1*vod(vgs))}
.func lambda_factor(vds,vgs,vds_term) {if((vds_term>0), 1+lambda0*abs(vds)*(1+lambda1*vod(vgs)*0), 1+lambda0*abs(vds))}
.func tanh_term(vds,vgs) {tanh(alpha_t()*vds/vod(vgs))}
.func IDSEQ(vds,vgs,vds_term) {if(vgs>vth_t(),(beta_t()*npow_term(vgs)*tanh_term(vds,vgs)*(lambda_factor(vds, vgs,vds_term))), 0)}
.func IDS(vds,vgs,vgd) {IF((vds>0), (IDSEQ(vds,vgs,vds)+ vds/5e6), -0.8*(IDSEQ(-vds,vgd,vds)+ vds/5e6) )}
G_DS Drain Source VALUE = {IDS(V(Drain,Source),V(Gate,Source),V(Gate,Drain))}
.ENDS IDJFET
*