[WEBINAR] Designer’s Guide to Using SiC FETs from UnitedSiC

Webinar : Designer’s Guide for using SiC Fets

Power Systems Design (PSD)/UnitedSiC Webinar:


November 4, 2021 @ 11am (ET)





Power designers are continually looking for the next new SiC FET power device that can help them separate their end-product performance from competitors. Providing clear design guidance can help power designers exploit SiC benefits easily and reliably to lower losses, increase efficiency, and improve cost-effectiveness.


Join Mike Zhu, Application Engineer from UnitedSiC, as he presents and explains the superior performance of the newest Gen 4 750V SiC FETs that will help you unlock the power of SiC.



Following this webinar, you’ll be able to:

  • – Understand why SiC FETs deliver superior performance
  • – Learn about all the key features of the new Gen 4 SiC FETs (i.e., Figures of Merit, 0V to 12V gate drive compatible with Si, 5µs short-circuit withstand time @ 6mΩ)
  • – Leverage these features in multiple key power applications
  • – Access key applications information directly related to your power design use case



  • Mr. Mike Zhu
    Mike Zhu is an application engineer at UnitedSiC Inc. He received his BS in Electrical Engineering from Chongqing University in 2013, and MS in Electrical & Computer Engineering from The Ohio State University in 2015 and joined UnitedSiC since then. He has 7 year’s research experience in SiC and GaN device evaluation, design of high frequency, high efficiency and high power density power electronics as well as EMI solutions for WBG devices.