UF4C/SC SiC FET Series

UF4C/SC SiC FETs

Based on a unique cascode configuration, the UF4C/SC Gen 4 SiC FET series is rated at 1200V and delivers industry-best performance Figures of Merit across RDS(on) x A, RDS(on) x Coss,tr and RDS(on) x Qg, making them the optimal power solution for mainstream 800V bus architectures. Excellent reliability, based on well-managed thermal performance of the UF4C/SC series, is a result of an advanced silver-sinter die attach and advanced wafer-thinning processing. These devices can be safely driven with standard 0V to 12V or 15V gate drive voltage. Good threshold noise margin is maintained with a true 5V threshold voltage and, like previous generations, these new SiC FETs can be operated from all the typical Si IGBT, Si MOSFET and SiC MOSFET drive voltages. They also include a built-in ESD gate protection clamp.

Features
  • 1200V
  • Low RDS(on) from 23mΩ to 70mΩ
  • Industry-best Figures of Merit (FoM)
  • Excellent reverse recovery
  • Low body diode
  • Low gate charge
  • Low intrinsic capacitance
  • ESD protected, HBM class 2
  • Industry standard through-hole and surface mount packaging
UF4C/SC SiC FET Series Selector Guide
Part # Package V RDS(on) typ
(mΩ)
ID Max (A) Data Sheet Design Files Buy Now Generation
TO-247-3L 1200 53 34 Buy Now 4
TO-247-4L 1200 53 34 Buy Now 4
TO-247-3L 1200 72 27.5 Buy Now 4
TO-247-4L 1200 72 27.5 Buy Now 4
TO-247-4L 1200 23 53 Buy Now 4
TO-247-4L 1200 30 53 Buy Now 4
Part # Package V RDS(on) typ
(mΩ)
ID Max (A) Data Sheet Design Files Buy Now Generation

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