1200V-80mΩ SiC FET
The UF3C120080K3S 1200V-80mΩ SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.
Select your distributor
Sign up for our quarterly newsletter and receive important technical information on all new products, app notes, white papers, and blogs.