1200V-80mΩ SiC FET
United Silicon Carbide’s UF3C120080K4S 1200V 80mΩ FET products co-package its high-performance Gen 3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
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