650V-80mΩ SiC FET
United Silicon Carbide’s UJ3C065080B3 650V 80mΩ RDS(on) SiC FET products co-package its high-performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in a D2PAK-3L package, these devices are excellent for switching inductive loads, and any application requiring standard gate drive.
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